feb. 2009 1 CM200TL-12NF application ac drive inverters & servo controls, etc mitsubishi igbt modules CM200TL-12NF high power switching use ? i c ................................................................... 200a ? v ces ............................................................ 600v ? insulated type ? 6-elements in a pack outline drawing & circuit diagram dimensions in mm p bu n cn-7 cn-8 cn-5 cn-6 up-1 up-2 v cn-3 cn-4 vp-1 vp-2 w cn-1 cn-2 wp-1 wp-2 nc nc nc label u b n p vw 1 18 cn 11 wp vp up 20 20 16.5 18 110 0.5 (6.05) (6.05) 11.7 26 26 17.5 135 10.5 10.5 18.7 110 10.5 10.5 10.5 10.5 (13) 48.75 13.75 26.5 4 4-5.5 mounting holes 78 0.5 (6.05) (6.05) 25 30.5 25 (13) 11 46.3 a b 13 24.1 (screwing depth) 6-m5 nuts +1 ?.5 housing type of a and b (j.s.t.mfg.co.ltd) a = b8p-vh-fb-b, b = b2p-vh-fb-b circuit diagram
feb. 2009 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 200a, v ge = 15v v cc = 300v, i c = 200a v ge = 15v r g = 3.1 ? , inductive load i e = 200a i e = 200a, v ge = 0v igbt part (1/6 module) *1 fwdi part (1/6 module) *1 case to heat sink, thermal compound applied (1/6 module) *2 i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 600 20 200 400 200 400 890 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 mitsubishi igbt modules CM200TL-12NF high power switching use v v a a a a w c c v rms n ?m n ?m g 1 0.5 2.2 30 3.7 1.2 120 100 300 300 150 2.8 0.14 0.22 31 ma a nf nf nf nc ns ns ns ns c v k/w k/w k/w ? 1.7 1.7 800 4.8 0.051 3.1 7v v 68 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r g symbol parameter v ge(th) v ce(sat) * 1 : case temperature (tc) measured point is just under the chips. if you use this value, r th(f-a) should be measured just under the chips. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage w eight g-e short c-e short dc, t c = 88 c *1 pulse (note 2) pulse (note 2) t c = 25 c terminals to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m5 screw t ypical value symbol parameter collector current emitter current t orque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. absolute maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) test conditions
feb. 2009 3 mitsubishi igbt modules CM200TL-12NF high power switching use performance curves 0 400 300 200 100 t j = 25c 11 12 10 9 8 v ge = 20v 15 0246810 0 10 1 10 2 2 3 5 7 10 3 2 3 5 7 0 100 200 300 400 v ge = 15v t j = 25c t j = 125c 10 8 6 4 2 0 20 12 14 6810 16 18 t j = 25c i c = 200a i c = 400a i c = 60a 12 4 35 t j = 25c t j = 125c 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 c ies c oes c res v ge = 0v 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 1 10 2 57 10 3 23 57 23 conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 125c inductive load t d(on) t d(off) t f t r 0 4 3 2 1 13 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) half-bridge switching characteristics (typical) switching time (ns) collector current i c (a)
feb. 2009 4 mitsubishi igbt modules CM200TL-12NF high power switching use reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) (ratio) time (s) recovery loss vs. i e (typical) recovery loss (mj/pulse) emitter current i e (a) switching loss vs. collector current (typical) switching loss (mj/pulse) collector current i c (a) recovery loss vs. gate resistance (typical) recovery loss (mj/pulse) gate resistance r g (?) switching loss vs. gate resistance (typical) switching loss (mj/pulse) gate resistance r g (?) 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 25c inductive load 10 1 10 0 10 ? 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 125c inductive load c snubber at bus err 10 1 10 0 10 ? 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 125c inductive load c snubber at bus esw(off) esw(on) 10 2 10 1 10 0 conditions: v cc = 300v v ge = 15v i c = 200a t j = 125c inductive load c snubber at bus esw(off) esw(on) 2 3 5 7 2 3 5 7 10 0 10 1 57 10 2 23 57 23 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse, t c = 25c under the chip igbt part: per unit base = r th(j c) = 0.14k / w fwdi part: per unit base = r th(j c) = 0.22k / w 10 1 10 0 10 ? 2 3 5 7 2 3 5 7 10 0 10 1 57 10 2 23 57 23 conditions: v cc = 300v v ge = 15v i e = 200a t j = 125c inductive load c snubber at bus err
feb. 2009 5 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) 400 800 1000 200 600 1200 0 20 15 10 5 0 0 v cc = 300v v cc = 200v i c = 200a mitsubishi igbt modules CM200TL-12NF high power switching use
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